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PHT4NQ10LT-135 Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET
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NXP Semiconductors
PHT4NQ10LT
N-channel TrenchMOS logic level FET
Table 7. Characteristics …continued
Symbol
Parameter
Conditions
RDSon
drain-source on-state VGS = 5 V; ID = 1.75 A; Tj = 150 °C;
resistance
see Figure 10; see Figure 11
VGS = 5 V; ID = 1.75 A; Tj = 25 °C;
see Figure 10; see Figure 11
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
ID = 3.5 A; VDS = 80 V; VGS = 5 V;
Tj = 25 °C; see Figure 12
VDS = 50 V; RL = 15 Ω; VGS = 5 V;
RG(ext) = 6 Ω; Tj = 25 °C
VSD
source-drain voltage IS = 3.5 A; VGS = 0 V; Tj = 25 °C;
see Figure 13
trr
reverse recovery time IS = 3.5 A; dIS/dt = -100 A/µs;
Qr
recovered charge
VGS = 0 V; VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
-
-
575 mΩ
-
200 250 mΩ
-
6.8 -
nC
-
1.1 -
nC
-
3.6 -
nC
-
4
-
ns
-
10 -
ns
-
52
-
ns
-
21 -
ns
-
0.87 1.5 V
-
50
-
ns
-
100 -
nC
10
ID 9
(A)
8
Tj = 25°C
03ac85
VGS = 5V
7
3V
6
2.8V
5
4
2.6V
3
2.4V
2
1
2.2V
2V
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VDS (V)
10
ID 9
(A)
8
VDS > ID X RDSon
7
6
5
4
3
150°C
2
1
0
0 0.5 1 1.5 2
03ac87
Tj = 25°C
2.5 3 3.5 4
VGS (V)
Fig 6. Output characteristics: drain current as a
Fig 7. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
PHT4NQ10LT
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 28 October 2011
© NXP B.V. 2011. All rights reserved.
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