BC856S Datasheet, PDF (7/12 Pages) NXP Semiconductors – PNP general purpose double transistor

NXP Semiconductors
BC856S
65 V, 100 mA PNP/PNP general-purpose transistor
−1
V_CEsat
(V)
−10^−1
(1)
(2)
(3)
006aab433
10⁹
f_T
(Hz)
10⁸
006aab434
−10^−_−²_10−1
−1
−10
−10²
−10³
I_C (mA)
I_C/I_B = 20
(1) T_amb = 150 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 8.
Per transistor: Collector-emitter saturation
voltage as a function of collector current;
typical values
10⁷
−10^−1
−1
−10
−10²
I_C (mA)
V_CE = −5 V; f = 1 MHz; T_amb = 25 °C
Fig 9. Per transistor: Transition frequency as a
function of collector current; typical values
BC856S_2
Product data sheet
Rev. 02 — 19 February 2009
© NXP B.V. 2009. All rights reserved.
7 of 12