BC856S Datasheet, PDF (2/12 Pages) NXP Semiconductors – PNP general purpose double transistor

NXP Semiconductors
BC856S
65 V, 100 mA PNP/PNP general-purpose transistor
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
BC856S
SC-88 plastic surface-mounted package; 6 leads
Version
SOT363
4. Marking
Table 4. Marking codes
Type number
BC856S
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code^[1]
5F*
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor
V_CBO
collector-base voltage open emitter
-
V_CEO
collector-emitter voltage open base
-
V_EBO
emitter-base voltage
open collector
-
I_C
collector current
-
P_tot
total power dissipation T_amb ≤ 25 °C
[1] _-
[2] _-
Per device
P_tot
total power dissipation T_amb ≤ 25 °C
[1] _-
[2] _-
T_j
junction temperature
-
T_amb
ambient temperature
−65
T_stg
storage temperature
−65
Max Unit
−80
V
−65
V
−5
V
−100 mA
220
mW
250
mW
300
mW
400
mW
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².
BC856S_2
Product data sheet
Rev. 02 — 19 February 2009
© NXP B.V. 2009. All rights reserved.
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