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BC856S Datasheet, PDF (6/12 Pages) NXP Semiconductors – PNP general purpose double transistor | |||
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NXP Semiconductors
BC856S
65 V, 100 mA PNP/PNP general-purpose transistor
500
hFE
400
(1)
300
(2)
200
(3)
100
006aab429
â0.20
IC
(A)
â0.15
â0.10
â0.05
IB (mA) = â5.0
â4.0
â3.0
â2.0
â1.0
006aab430
â4.5
â3.5
â2.5
â1.5
â0.5
0
â10â1
â1
â10
â102
â103
IC (mA)
0
0
â1
â2
â3
â4
â5
VCE (V)
VCE = â5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = â55 °C
Fig 4. Per transistor: DC current gain as a function of
collector current; typical values
Fig 5.
Tamb = 25 °C
Per transistor: Collector current as a function
of collector-emitter voltage; typical values
â1.2
VBE
(V)
â1.0
â0.8
006aab431
(1)
(2)
â1.2
VBEsat
(V)
â1.0
â0.8
006aab432
(1)
(2)
â0.6
(3)
â0.4
â0.6
(3)
â0.4
â0.2
â10â1
â1
â10
â102
â103
IC (mA)
VCE = â5 V
(1) Tamb = â55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 6. Per transistor: Base-emitter voltage as a
function of collector current; typical values
â0.2
â10â1
â1
â10
â102
â103
IC (mA)
IC/IB = 20
(1) Tamb = â55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 7.
Per transistor: Base-emitter saturation voltage
as a function of collector current; typical
values
BC856S_2
Product data sheet
Rev. 02 â 19 February 2009
© NXP B.V. 2009. All rights reserved.
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