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BC856S Datasheet, PDF (4/12 Pages) NXP Semiconductors – PNP general purpose double transistor
NXP Semiconductors
BC856S
65 V, 100 mA PNP/PNP general-purpose transistor
103
Zth(j-a)
(K/W)
102
δ=1
0.50
0.20
0.75
0.33
0.10
0.05
0.02
10 0.01
0
006aab420
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Fig 2.
FR4 PCB, standard footprint
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
103
Zth(j-a)
(K/W)
102
δ=1
0.50
0.20
0.75
0.33
0.10
0.05
0.02
10
0.01
0
006aab421
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Fig 3.
FR4 PCB, mounting pad for collector 1 cm2
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
BC856S_2
Product data sheet
Rev. 02 — 19 February 2009
© NXP B.V. 2009. All rights reserved.
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