BC856S Datasheet, PDF (1/12 Pages) NXP Semiconductors – PNP general purpose double transistor

BC856S
65 V, 100 mA PNP/PNP general-purpose transistor
Rev. 02 — 19 February 2009
Product data sheet
1. Product profile
1.1 General description
PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88)
Surface-Mounted Device (SMD) plastic package.
1.2 Features
I Low collector capacitance
I Low collector-emitter saturation voltage
I Closely matched current gain
I Reduces number of components and board space
I No mutual interference between the transistors
1.3 Applications
I General-purpose switching and amplification
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Per transistor
V_CEO
I_C
h_FE
collector-emitter voltage open base
collector current
DC current gain
V_CE = −5 V;
I_C = −2 mA
Min Typ Max Unit
-
-
-
-
110 -
−65 V
−100 mA
-
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
Simplified outline Graphic symbol
654
654
123
TR2
TR1
123
sym018