BC856S Datasheet, PDF (3/12 Pages) NXP Semiconductors – PNP general purpose double transistor

NXP Semiconductors
BC856S
65 V, 100 mA PNP/PNP general-purpose transistor
500
P_tot
(mW)
(1)
400
(2)
300
006aab419
200
100
0
−75
−25
25
75
125
175
T_amb (°C)
(1) FR4 PCB, mounting pad for collector 1 cm²
(2) FR4 PCB, standard footprint
Fig 1. Per device: Power derating curves SOT363 (SC-88)
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter
Per transistor
R_th(j-a)
thermal resistance from
junction to ambient
Conditions
in free air
R_th(j-sp)
Per device
R_th(j-a)
thermal resistance from
junction to solder point
thermal resistance from
junction to ambient
in free air
Min Typ Max Unit
[1] _-
-
568 K/W
[2] _-
-
500 K/W
-
-
230 K/W
[1] _-
-
416 K/W
[2] _-
-
313 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².
BC856S_2
Product data sheet
Rev. 02 — 19 February 2009
© NXP B.V. 2009. All rights reserved.
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