BC856BS Datasheet, PDF (7/12 Pages) NXP Semiconductors – 65 V, 100 mA PNP/PNP general-purpose transistor

NXP Semiconductors
BC856BS
65 V, 100 mA PNP/PNP general-purpose transistor
−10
V_CEsat
(V)
−1
−10^−1
(1)
(2)
(3)
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10³
f_T
(MHz)
10²
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−10^−2
−10^−1
−1
−10
−10²
−10³
I_C (mA)
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 7.
Per transistor: Collector-emitter saturation
voltage as a function of collector current;
typical values
10
C_c
(pF)
8
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6
4
2
0
0
−2
−4
−6
−8
−10
V_CB (V)
Fig 9.
f = 1 MHz; T_amb = 25 °C
Per transistor: Collector capacitance as a
function of collector-base voltage; typical
values
10
−1
−10
V_CE = −5 V; T_amb = 25 °C
I_C (mA)
−10²
Fig 8. Per transistor: Transition frequency as a
function of collector current; typical values
15
C_e
(pF)
13
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11
9
7
5
0
−2
−4
−6
V_EB (V)
f = 1 MHz; T_amb = 25 °C
Fig 10. Per transistor: Emitter capacitance as a
function of emitter-base voltage; typical values
BC856BS_1
Product data sheet
Rev. 01 — 11 August 2009
© NXP B.V. 2009. All rights reserved.
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