BC856BS Datasheet, PDF (3/12 Pages) NXP Semiconductors – 65 V, 100 mA PNP/PNP general-purpose transistor

NXP Semiconductors
BC856BS
65 V, 100 mA PNP/PNP general-purpose transistor
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor
V_CBO
collector-base voltage open emitter
-
V_CEO
collector-emitter voltage open base
-
V_EBO
emitter-base voltage
open collector
-
I_C
collector current
-
I_CM
peak collector current single pulse;
-
t_p ≤ 1 ms
I_BM
peak base current
single pulse;
-
t_p ≤ 1 ms
P_tot
total power dissipation T_amb ≤ 25 °C
[1] _-
Per device
P_tot
T_j
T_amb
T_stg
total power dissipation
junction temperature
ambient temperature
storage temperature
T_amb ≤ 25 °C
[1] _-
-
−55
−65
Max Unit
−80
V
−65
V
−6
V
−100 mA
−200 mA
−200 mA
200
mW
300
mW
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
500
P_tot
(mW)
400
006aab618
300
200
100
0
−75
−25
25
75
125
175
T_amb (°C)
FR4 PCB, standard footprint
Fig 1. Per device: Power derating curve SOT363 (SC-88)
BC856BS_1
Product data sheet
Rev. 01 — 11 August 2009
© NXP B.V. 2009. All rights reserved.
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