BC856BS Datasheet, PDF (1/12 Pages) NXP Semiconductors – 65 V, 100 mA PNP/PNP general-purpose transistor

BC856BS
65 V, 100 mA PNP/PNP general-purpose transistor
Rev. 01 — 11 August 2009
Product data sheet
1. Product profile
1.1 General description
PNP/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD)
plastic package.
Table 1. Product overview
Type number Package
NXP
BC856BS
SOT363
JEITA
SC-88
NPN/NPN
complement
BC846BS
NPN/PNP
complement
BC846BPN
1.2 Features
I Low collector capacitance
I Low collector-emitter saturation voltage
I Closely matched current gain
I Reduces number of components and board space
I No mutual interference between the transistors
I AEC-Q101 qualified
1.3 Applications
I General-purpose switching and amplification
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Conditions
Per transistor
V_CEO
I_C
h_FE
collector-emitter voltage
collector current
DC current gain
open base
V_CE = −5 V;
I_C = −2 mA
Min Typ Max Unit
-
-
−65 V
-
-
−100 mA
200 290 450