BC856BS Datasheet, PDF (5/12 Pages) NXP Semiconductors – 65 V, 100 mA PNP/PNP general-purpose transistor

NXP Semiconductors
BC856BS
65 V, 100 mA PNP/PNP general-purpose transistor
7. Characteristics
Table 8. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per transistor
I_CBO
collector-base cut-off V_CB = −50 V; I_E = 0 A
current
V_CB = −30 V; I_E = 0 A;
T_j = 150 °C
I_EBO
emitter-base cut-off V_EB = −6 V; I_C = 0 A
current
h_FE
V_CEsat
V_BEsat
V_BE
C_c
DC current gain
V_CE = −5 V
I_C = −10 µA
I_C = −2 mA
collector-emitter
saturation voltage
I_C = −10 mA;
I_B = −0.5 mA
I_C = −100 mA; I_B = −5 mA
base-emitter
saturation voltage
I_C = −10 mA;
I_B = −0.5 mA
I_C = −100 mA; I_B = −5 mA
base-emitter voltage V_CE = −5 V
I_C = −2 mA
I_C = −10 mA
collector capacitance V_CB = −10 V; I_E = i_e = 0 A;
f = 1 MHz
C_e
emitter capacitance V_EB = −0.5 V;
I_C = i_c = 0 A; f = 1 MHz
f_T
transition frequency V_CE = −5 V; I_C = −10 mA;
f = 100 MHz
NF
noise figure
V_CE = −5 V; I_C = −0.2 mA;
R_S = 2 kΩ;
f = 10 Hz to 15.7 kHz
V_CE = −5 V; I_C = −0.2 mA;
R_S = 2 kΩ; f = 1 kHz;
B = 200 Hz
Min Typ Max Unit
-
-
−15 nA
-
-
−5
µA
-
-
−100 nA
-
270 -
200 290 450
-
−55 −100 mV
-
−200 −300 mV
-
−755 −850 mV
-
−900 -
mV
−600 −650 −750 mV
-
-
−820 mV
-
2.3 -
pF
-
10
-
pF
100 -
-
MHz
-
1.6 -
dB
-
2.9 -
dB
BC856BS_1
Product data sheet
Rev. 01 — 11 August 2009
© NXP B.V. 2009. All rights reserved.
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