BC856BS Datasheet, PDF (6/12 Pages) NXP Semiconductors – 65 V, 100 mA PNP/PNP general-purpose transistor

NXP Semiconductors
BC856BS
65 V, 100 mA PNP/PNP general-purpose transistor
600
h_FE
(1)
400
(2)
200
(3)
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−0.20
I_C
(A)
−0.16
−0.12
−0.08
−0.04
I_B (mA) = −2.5
−2.25
−2.0
−1.75
−1.5
−1.25
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−1.0
−0.75
−0.5
−0.25
0
−10^−2 −10^−1
−1
−10
−10²
−10³
I_C (mA)
0
0
−2
−4
−6
−8
−10
V_CE (V)
V_CE = −5 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 3. Per transistor: DC current gain as a function of
collector current; typical values
Fig 4.
T_amb = 25 °C
Per transistor: Collector current as a function
of collector-emitter voltage; typical values
−1
V_BE
(V)
−0.8
−0.6
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−1.3
V_BEsat
(V)
−1.1
−0.9
(1)
−0.7
(2)
(3)
−0.5
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−0.3
−0.4
−10^−1
−1
−10
V_CE = −5 V; T_amb = 25 °C
−10²
−10³
I_C (mA)
Fig 5. Per transistor: Base-emitter voltage as a
function of collector current; typical values
−0.1
−10^−1
−1
−10
−10²
−10³
I_C (mA)
I_C/I_B = 20
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 6.
Per transistor: Base-emitter saturation voltage
as a function of collector current; typical
values
BC856BS_1
Product data sheet
Rev. 01 — 11 August 2009
© NXP B.V. 2009. All rights reserved.
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