BC856BS Datasheet, PDF (4/12 Pages) NXP Semiconductors – 65 V, 100 mA PNP/PNP general-purpose transistor

NXP Semiconductors
BC856BS
65 V, 100 mA PNP/PNP general-purpose transistor
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Per transistor
R_th(j-a)
thermal resistance from
junction to ambient
R_th(j-sp)
thermal resistance from
junction to solder point
Per device
R_th(j-a)
thermal resistance from
junction to ambient
Conditions
in free air
in free air
Min Typ Max
[1] _-
-
625
-
-
230
[1] _-
-
416
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Unit
K/W
K/W
K/W
10³
Z_th(j-a)
(K/W)
10²
δ=1
0.50
0.20
0.75
0.33
0.10
0.05
0.02
10 _0.01
0
006aab619
1
10^−5
10^−4
10^−3
10^−2
10^−1
1
10
10²
10³
t_p (s)
Fig 2.
FR4 PCB, standard footprint
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
BC856BS_1
Product data sheet
Rev. 01 — 11 August 2009
© NXP B.V. 2009. All rights reserved.
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