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TDA8920C Datasheet, PDF (2/40 Pages) NXP Semiconductors – 2 X110 W class-D power amplifier
NXP Semiconductors
TDA8920C
2 × 110 W class-D power amplifier
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
General, VP = ±30 V
VP
supply voltage
VP(ovp) overvoltage protection
supply voltage
Iq(tot)
total quiescent current
Operating mode
Non-Operating mode;
VDD − VSS
Operating mode; no load;
no filter; no RC-snubber
network connected
Stereo single-ended configuration
Po
output power
L = 22 µH; C = 680 nF;
Tj = 85 °C
THD = 10 %; RL = 4 Ω;
VP = ±30 V
THD = 10 %; RL = 4 Ω;
VP = ±27 V
Mono bridge-tied load configuration
Po
output power
L = 22 µH; C = 680 nF;
Tj = 85 °C; THD = 10 %;
RL = 8 Ω; VP = ±30 V
Min Typ
[1] ±12.5 ±30
65 -
-
50
[2] -
110
-
80
[2] -
210
[1] The circuit is DC adjusted at VP = ±12.5 V to ±32.5 V.
[2] Output power is measured indirectly; based on RDSon measurement; see Section 13.3.
Max Unit
±32.5 V
70 V
75 mA
-
W
-
W
-
W
5. Ordering information
Table 2. Ordering information
Type number
Package
Name
Description
Version
TDA8920CJ
DBS23P plastic DIL-bent-SIL power package; 23 leads (straight lead length 3.2 mm) SOT411-1
TDA8920CTH
HSOP24 plastic, heatsink small outline package; 24 leads; low stand-off height
SOT566-3
TDA8920C_1
Preliminary data sheet
Rev. 01 — 29 September 2008
© NXP B.V. 2008. All rights reserved.
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