TDA8920C Datasheet, PDF (12/40 Pages) NXP Semiconductors – 2 X110 W class-D power amplifier

NXP Semiconductors
TDA8920C
2 × 110 W class-D power amplifier
9. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_P
I_ORM
supply voltage
repetitive peak
output current
Non-Operating mode; V_DD − V_SS
maximum output current limiting
T_stg
T_amb
T_j
V_MODE
storage temperature
ambient temperature
junction temperature
voltage on pin
MODE
referenced to SGND
V_OSC voltage on pin OSC
V_I
V_PROT
V_esd
I_q(tot)
input voltage
referenced to SGND; pin IN1P; IN1M;
IN2P and IN2M
voltage on pin PROT referenced to voltage on pin VSSD
electrostatic
discharge voltage
Human Body Model (HBM);
pin VSSP1 with respect to other pins
HBM; all other pins
Machine Model (MM); all pins
Charged Device Model (CDM)
total quiescent
current
Operating mode; no load; no filter; no
RC-snubber network connected
Min Max Unit
-
65
V
9.2 -
A
−55 +150 °C
−40 +85 °C
-
150 °C
0
6
V
0
SGND V
+6
−5
+5
V
0
12
V
−1800 +1800 V
−2000 +2000 V
−200 +200 V
−500 +500 V
-
75
mA
10. Thermal characteristics
Table 6.
Symbol
R_th(j-a)
R_th(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
thermal resistance from junction to case
Conditions
in free air
Typ
Unit
40
K/W
1.1
K/W
TDA8920C_1
Preliminary data sheet
Rev. 01 — 29 September 2008
© NXP B.V. 2008. All rights reserved.
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