PHU78NQ03LT Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOSTM logic level FET

PHU78NQ03LT
N-channel TrenchMOS logic level FET
Rev. 06 — 15 June 2009
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Suitable for high frequency
applications due to fast switching
characteristics
„ Suitable for logic level gate drive
sources
1.3 Applications
„ Computer motherboards
„ DC-to-DC convertors
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
T_mb = 25 °C; V_GS = 10 V;
see Figure 1; see Figure 3
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
Dynamic characteristics
Q_GD
gate-drain charge V_GS = 4.5 V; I_D = 25 A;
V_DS = 12 V; T_j = 25 °C;
see Figure 9; see Figure 10
Static characteristics
R_DSon
drain-source
on-state resistance
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C; see Figure 7;
see Figure 8
Min Typ Max Unit
-
-
25 V
-
-
75 A
-
-
107 W
-
4
-
nC
-
7.65 9
mΩ