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M36W0R6050T1 Datasheet, PDF (13/22 Pages) STMicroelectronics – 64 Mbit (4 Mb ×16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb ×16) PSRAM, multi-chip package
M36W0R6050T1, M36W0R6050B1
3
Functional description
Functional description
The Flash memory and PSRAM components have separate power supplies but share the
same grounds. They are distinguished by three Chip Enable inputs: EF for the Flash
memory and E1P and E2P for the PSRAM.
Recommended operating conditions do not allow more than one device to be active at a
time. The most common example is simultaneous read operations on the Flash memory and
the PSRAM which would result in a data bus contention. Therefore it is recommended to put
the other devices in the high impedance state when reading the selected device.
Figure 3. Functional block diagram
VDDF VPPF VDDQF
A21
A0-A20
EF
GF
WF
LF
KF
RPF
WPF
64 Mbit
Flash
Memory
VDDP
WAITF
DQ0-DQ15
E1P
GP
WP
E2P
UBP
LBP
32 Mbit
PSRAM
VSS
AI12.36
13/22