M36W0R6050T1 Datasheet, PDF(12/22 Page) STMicroelectronics – 64 Mbit (4 Mb ×16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb ×16) PSRAM, multi-chip package

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M36W0R6050T1 Datasheet, PDF (12/22 Pages) STMicroelectronics – 64 Mbit (4 Mb ×16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb ×16) PSRAM, multi-chip package

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Signal descriptions

M36W0R6050T1, M36W0R6050B1

2.20

VPPF program supply voltage

VPPF is both a Flash Memory control input and a Flash Memory power supply pin. The two

functions are selected by the voltage range applied to the pin.

If VPPF is kept in a low voltage range (0V to VDDQF) VPPF is seen as a control input. In this

case a voltage lower than VPPLKF gives an absolute protection against Program or Erase,

while VPPF > VPP1F enables these functions (see the M58WR064HT/B datasheet for the

relevant values). VPPF is only sampled at the beginning of a Program or Erase; a change in

its value after the operation has started does not have any effect and Program or Erase

operations continue.

If VPPF is in the range of VPPHF it acts as a power supply pin. In this condition VPPF must be

stable until the Program/Erase algorithm is completed.

2.21

Note:

VSS ground

VSS is the common ground reference for all voltage measurements in the Flash memory

(core and I/O Buffers) and PSRAM components.

Each Flash memory device in a system should have its supply voltages (VDDF, VDDQF) and

the program supply voltage VPPF decoupled with a 0.1ÂµF ceramic capacitor close to the pin

(high frequency, inherently low inductance capacitors should be as close as possible to the

package). See Figure 5: AC measurement load circuit. The PCB track widths should be

sufficient to carry the required VPPF program and erase currents.

12/22

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