M36W0R6040T3 Datasheet, PDF (12/23 Pages) Numonyx B.V – 64-Mbit (4 Mbits ×16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit ×16) or 32-Mbit (2 Mbits x16) PSRAM MCP

Signal descriptions
M36P0R9070E0
2.17
Deep Power-Down input (DPD_F)
The Deep Power-Down input is used to place the device in a Deep Power-Down
mode.When the device is in Deep Power-Down mode, the memory cannot be modified and
data is protected.
For further details on how the Deep Power-Down input signal works, please refer to the
M58PR512J datasheet.
2.18
V_DDF Supply Voltages
V_DDF provides the power supply to the internal cores of the Flash memory. It is the main
power supply for all Flash memory operations (Read, Program and Erase).
2.19
V_CCP Supply Voltage
V_CCP provides the power supply to the internal core of the PSRAM device. It is the main
power supply for all PSRAM operations.
2.20
2.21
V_DDQ Supply Voltage
V_DDQ provides the power supply for the Flash memory and PSRAM I/O pins. This allows all
Outputs to be powered independently of the Flash memory and SRAM core power supplies,
V_DDF and V_CCP.
V_PPF Program Supply Voltage
V_PPF is both a control input and a power supply pin for the Flash memory. The two functions
are selected by the voltage range applied to the pin.
If V_PPF is kept in a low voltage range (0V to V_DDQ) V_PPF is seen as a control input. In this
case a voltage lower than V_PPLK gives an absolute protection against Program or Erase,
while V_PPF > V_PP1 enables these functions (see the M58PRxxxJ datasheet for the relevant
values). V_PPF is only sampled at the beginning of a Program or Erase; a change in its value
after the operation has started does not have any effect and Program or Erase operations
continue.
If V_PPF is in the range of V_PPH it acts as a power supply pin. In this condition V_PPF must be
stable until the Program/Erase algorithm is completed.
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