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DS92LV3221 Datasheet, PDF (6/24 Pages) National Semiconductor (TI) – 20-50 MHz 32-Bit Channel Link II Serializer / Deserializer
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (VDD)
LVCMOS Input
Voltage
LVCMOS Output
Voltage
LVDS Deserializer Input
Voltage
−0.3V to +4V
−0.3V to (VDD +0.3V)
−0.3V to (VDD +0.3V)
−0.3V to +3.9V
LVDS Driver Output
Voltage
−0.3V to +3.9V
Junction Temperature
+125°C
Storage Temperature
−65°C to +150°C
Lead Temperature
(Soldering, 4 seconds)
+260°C
Maximum Package Power Dissipation Capacity
Package Derating:
1/θJA °C/W above +25°C
  θJA
35.7 °C/W*
  θJC
12.6 °C/W
*4 Layer JEDEC
ESD Rating (HBM)
>4 kV
Recommended Operating
Conditions
Supply Voltage (VDD)
Supply Voltage (IOVDD)
(SER ONLY)
3.3V I/O Interface
1.8V I/O Interface
Operating Free Air
Temperature (TA)
Input Clock Rate
Tolerable Supply Noise
Min
3.135
3.135
1.71
−40
20
Nom
3.3
3.3
1.8
+25
Max
3.465
3.465
1.89
+85
50
100
Units
V
V
V
°C
MHz
mVP-P
Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified. (Note 2, Note 3)
Symbol
Parameter
Conditions
Min
Typ
LVCMOS DC SPECIFICATIONS
VIH
High Level Input Voltage
Tx: IOVDD = 1.71V to 1.89V
Tx: IOVDD = 3.135V to 3.465V
Rx
0.65 x
IOVDD
2.0
VIL
Low Level Input Voltage
Tx: IOVDD = 1.71V to 1.89V
GND
Tx: IOVDD = 3.135V to 3.465V
Rx
VCL
Input Clamp Voltage
IIN
Input Current
VOH
High Level Output Voltage
VOL
Low Level Output Voltage
IOS
Output Short Circuit Current
IOZ
TRI-STATE® Output Current
SERIALIZER LVDS DC SPECIFICATIONS
ICL = −18 mA
Tx: VIN = 0V or 3.465V(1.89V)
IOVDD = 3.465V(1.89V)
Rx: VIN = 0V or 3.465V
IOH = −2mA
IOH = −2mA
VOUT = 0V
PDB = 0V,
VOUT = 0V or VDD
VOD
Output Differential Voltage
No pre-emphasis, VSEL = L
(VSEL = H)
ΔVOD
Output Differential Voltage Unbalance VSEL = L,
No pre-emphasis
VOS
Offset Voltage
VSEL = L,
No pre-emphasis
ΔVOS
Offset Voltage Unbalance
VSEL = L,
No pre-emphasis
GND
−10
−10
2.4
GND
−10
−0.8
3.0
0.33
−22
350
(629)
440
(850)
1
1.00 1.25
4
Max Units
IOVDD +
0.3
V
VDD
0.35 x
IOVDD
V
0.8
−1.5
V
+10
µA
+10
VDD
V
0.5
V
−40 mA
+10
μA
525
(1000)
mVP-P
50
mVP-P
1.50
V
50
mV
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