LMH0031 Datasheet, PDF (5/31 Pages) National Semiconductor (TI) – SMPTE 292M/259M Digital Video Deserializer Descrambler with Video and Ancillary Data FIFOs

Absolute Maximum Ratings (Note 1)
It is anticipated that this device will not be offered in
a military qualified version. If Military/Aerospace speci-
fied devices are required, please contact the National
Semiconductor Sales Office / Distributors for availability
and specifications.
CMOS I/O Supply Voltage
(V_DDIO– V_SSIO):
SDI Supply Voltage
(V_DDSI– V_SSSI):
Digital Logic Supply Voltage
(V_DDD– V_SSD):
PLL Supply Voltage
(V_DDPLL– V_SSPLL):
CMOS Input Voltage
(Vi):
CMOS Output Voltage
(Vo):
4.0V
4.0V
3.0V
3.0V
V_SSIO −0.15V to
V_DDIO +0.15V
V_SSIO −0.15V to
V_DDIO +0.15V
CMOS Input Current (single input):
Vi = V_SSIO −0.15V:
Vi = V_DDIO +0.15V:
CMOS Output Source/Sink Current:
I_BB Output Current:
I_REF Output Current:
SDI Input Voltage
(Vi):
Package Thermal Resistance
θ_JA @ 0 LFM Airflow
θ_JA @ 500 LFM Airflow
θ_JC
Storage Temp. Range:
Junction Temperature:
Lead Temperature (Soldering 4
Sec):
ESD Rating (HBM):
ESD Rating (MM):
Recommended Operating Conditions
Symbol
V_DDIO
V_DDSD
V_DDD
V_DDPLL
T_A
Parameter
CMOS I/O Supply Voltage
SDI Supply Voltage
Digital Logic Supply
Voltage
PLL Supply Voltage
Operating Free Air
Temperature
Conditions
V_DDIO−V_SSIO
V_DDSI−V_SSSI
V_DDD– V_SSD
V_DDPLL– V_SSPLL
Reference
Min
3.150
Typ
3.300
2.375 2.500
0
Required Input Conditions
(Note 9)
Symbol
V_IN
t_r, t_f
Parameter
Input Voltage Range
Rise Time, Fall Time
BR_SDI
Serial Input Data Rate
V_CM(SDI)
V_IN(SDI)
V_IN(SDI)
Common Mode Voltage
SDI Serial Input Voltage,
Single-ended
SDI Serial Input Voltage,
Differential
t_r, t_f
Rise Time, Fall Time
Conditions
10%–90%
SMPTE 259M, Level C
SMPTE 259M, Level D
SMPTE 344M
SMPTE 292M
SMPTE 292M
V_IN = 125 mV_P-P
20%–80%, SMPTE 259M
Data Rates
20%–80%, SMPTE 292M
Data Rates
Reference
All LVCMOS
Inputs
SDI, SDI
SDI, SDI
Min
V_SSIO
1.0
V_SSSI
+1.0V
125
Typ
1.5
270
360
540
1,483
1,485
800
125
800
0.4
1.0
−5 mA
+5 mA
±6 mA
+300 µA
+300 µA
V_SSSI −0.15V to
V_DDSI +0.15V
40.1˚C/W
24.5˚C/W
5.23˚C/W
−65˚C to +150˚C
+150˚C
+260˚C
6.0 kV
400 V
Max
3.450
Units
V
2.625
V
+70
˚C
Max
V_DDIO
3.0
Units
V
ns
M_BPS
V_DDSI
−0.05V
880
V
mV_P-P
880
mV_P-P
1.5
ns
270
ps
5
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