NS32FX211 Datasheet, PDF (2/12 Pages) National Semiconductor (TI) – Microprocessor Compatible Real Time C

Absolute Maximum Ratings (Note 1)
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DC Input or Output Voltage
DC Input or Output Diode Current
b0 3V to V_DD a0 3V
g5 0 mA
Storage Temperature (T_STG)
Supply Voltage (V_DD)
Power Dissipation (P_D)
Lead Temperature
(Soldering 10 seconds)
b65 C to a150 C
6 5V
500 mW
260 C
Operating Conditions
Min Max Units
Operating Supply Voltage
4 75 5 25 V
Standby Mode Supply Voltage 2 2 5 5 V
DC Input or Output Voltage
0 V_DD V
Operating Temperature Range 0 70
C
Electrical Characteristics V_DD e 5V g5% T e 0 C to a70 C unless otherwise stated
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V_IH
High Level Input Voltage
(except XTAL IN)
20
V
V_IL
Low Level Input Voltage
(except XTAL IN)
08
V
V_OH
High Level Output Voltage
I_OH e b20 mA
V_DD b 0 1
V
(DB0 – DB3)
I_OH e b1 6 mA
37
V
V_OH
High Level Output
Voltage (INT)
I_OH e b20 mA
(In Test Mode)
V_DD b 0 1
V
V_OL
Low Level Output Voltage
I_OL e 20 mA
(DB0–DB3 INT)
I_OL e 1 6 mA
I_IL
Low Level Input Current
V_IN e V_SS (Note 2)
b5
(AD0–AD3 DB0–DB3)
01
V
04
V
b90
mA
I_IL
Low Level Input Current
V_IN e V_SS (Note 2)
b5
b200
mA
(WR RD)
I_IL
Low Level Input
V_IN e V_SS (Note 2)
b5
b570
mA
Current (CS)
I_OZH
Output High Level
Leakage Current (INT)
V_OUT e V_DD
20
mA
I_DD
Average Supply Current
All V_IN e V_CC or Open Circuit
V_DD e 2 2V (Standby Mode)
V_DD e 5 0V (Static Mode)
4
10
mA
1
mA
C_IN
Input Capacitance
5
10
pF
C_OUT
Output Capacitance
(Outputs Disabled)
10
pF
Note 1 Absolute Maximum Ratings are those values beyond which damage to the device may occur All voltages referenced to ground unless otherwise noted
Note 2 The DB0–DB3 and AD0–AD3 lines all have active P-channel pull-up transistors which will source current The CS RD and WR lines have internal pull-up
resistors to V_DD
2