LMH6601_14 Datasheet, PDF (2/37 Pages) National Semiconductor (TI) – LMH6601/LMH6601Q 250 MHz, 2.4V CMOS Operational Amplifier with Shutdown

LMH6601, LMH6601-Q1
SNOSAK9E – JUNE 2006 – REVISED MARCH 2013
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS ⁽¹⁾
ESD Tolerance ⁽²⁾
V_IN Differential
Input Current⁽³⁾
Output Current
Supply Voltage (V⁺ – V^−)
Voltage at Input/Output Pins
Storage Temperature Range
Junction Temperature
Soldering Information
Human Body Model
Machine Model
Infrared or Convection (20 sec.)
Wave Soldering (10 sec.)
2 kV
200V
±2.5V
±10 mA
200 mA ⁽⁴⁾
6.0V
V⁺+0.5V, V^−−0.5V
−65°C to +150°C
+150°C
235°C
260°C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For specifications and the test conditions, see the
Electrical Characteristics.
(2) Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of
JEDEC). Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
(3) Negative input current implies current flowing out of the device.
(4) The maximum continuous output current (I_OUT) is determined by device power dissipation limitations.
OPERATING RATINGS ⁽¹⁾
Supply Voltage (V⁺ – V^−)
2.4V to 5.5V
Operating Temperature Range
−40°C to +85°C
Package Thermal Resistance (θ_JA)
6-pin SC70
414°C/W
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For specifications and the test conditions, see the
Electrical Characteristics.
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