LMH6601_14 Datasheet, PDF (13/37 Pages) National Semiconductor (TI) – LMH6601/LMH6601Q 250 MHz, 2.4V CMOS Operational Amplifier with Shutdown

LMH6601, LMH6601-Q1
www.ti.com
SNOSAK9E – JUNE 2006 – REVISED MARCH 2013
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Unless otherwise noted, all data is with A_V = +2, R_F = R_G = 604Ω, V_S = 3.3V, V_OUT = V_S/2, SD tied to V⁺, R_L = 150Ω to V^−, T =
25°C.
THD
vs.
Output Swing
-20
R_L = 1 k: to V_S/2
-30 V_S = 3.3V
Slew Rate
vs.
Ambient Temperature
310
5V, FALLING
290
-40
270 _{3.3V, FALLING}
-50
250
5V, RISING
-60
10 MHz
-70
230
3.3V RISING
210
-80
-90
-100
0
1 MHz
0.5 1 1.5 2
OUTPUT (V_PP)
Figure 21.
2.5 3
190
170 ^{AV = +2}
V_OUT = 2 V_PP
150
-40 -20 0
20 40
60 80 100
TEMPERATURE (°C)
Figure 22.
Settling Time (±1%)
vs.
Output Swing
80
A_V = -1
70 R_L = 150: to V_S/2
60 ^{VS = 5V}
50
40
30
20
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V_OUT (V_PP)
Figure 23.
Output Settling
V_S = 5V
R_L = 150: to V_S/2
A_V = -1
V_OUT = 1 V_PP
TIME (20 ns/DIV)
Figure 24.
Isolation Resistor & Settling Time
vs.
C_L
250
25
SETTLING TIME
200
20
10% OVERSHOOT
ACROSS C_L
150
15
A_V = -1
100
R_L = R_F = 1 k:
10
V_S = 5V
50
V_O = 1 V_PP STEP ₅
ISOLATION RESISTOR
0
0
0
50 100 150 200 250
C_L (pF)
Figure 25.
Isolation Resistor & Settling Time
vs.
C_L
250
25
SETTLING TIME
200
20
10% OVERSHOOT
150
ACROSS C_L
15
A_V = -1
100
R_L = R_F = 1 k:
10
V_S = 3.3V
50
V_O = 1 V_PP STEP ₅
ISOLATION RESISTOR
0
0
0
50 100 150 200 250
C_L (pF)
Figure 26.
Copyright © 2006–2013, Texas Instruments Incorporated
Submit Documentation Feedback
13
Product Folder Links: LMH6601 LMH6601-Q1