NSGM100GB12A Datasheet, PDF (6/6 Pages) Nell Semiconductor Co., Ltd – IGBT Module (2 in one-package), 100A

SEMICONDUCTOR
NSGM100GB Series RRooHHSS
Fig.15 Typ.switching losses , E=f (RG) , inductive load , Tj=125 C
Parameter:VGE=600V , VGE=+15V , IC=100A
40
Eon
35
30
25
20
Fig.16 Forward characteristics of fast recovery
reverse diode , IF=f (VF) , Parameter:Tj
200
180
160
140
120
T_j=125 C
T =25 C
j
100
15
Eoff
10
5
0
0
10
20
30
40
50
60
RG (_Ω)
80
60
40
20
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VF (V)
Fig.17 Transient thermal impedance Diode , ZthJC=f (tp)
Parameter:D=tp / T
10 ⁰
10 ^-1
10 ^-2
10 ^-3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 ^-4
-5
10
-4
10
-3
10
-2
10
tp (s)
-1
10
0
10
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