NSGM100GB12A Datasheet, PDF (1/6 Pages) Nell Semiconductor Co., Ltd – IGBT Module (2 in one-package), 100A

SEMICONDUCTOR
NSGM100GB Series RRooHHSS
Features ^{IGBT Module (2 in one-package), 100A}
1. High frequency operation
2. Low losses and soft switching
3. Isolated baseplate for easy heat sinking
4. Discrete super-fast recovery free-wheel diode
5. Small temperature dependence of the turn-off switching loss
Typical Applications
23+0.5
40+0.5
23+0.5
3-M5.0
AC Motor Control
DC Motor Control
UPS
Welding Power Supplies
Inverter
Electronic welders at fsw up to 20kHz
Ordering code
2- 6.3
C2E1
E2
C1
80+0.5
93+0.5
NSGM 100 GB xx A
(1) (2) (3) (4) (5)
(1) For IGBT module
(2) Maximum average forward current , A
17+0.5
10
17+0.5
10
17+0.5
10
2.8x0.5
(3) 2 in one-package
(4) Voltage code , V ( code x 10 = / V_RRM )
(5) Case style
C2E1
E2
C1
All dimensions in millimeters
Absolute maximum ratings , Tj=25 C unless otherwise specified
IC
ICM
Pc
VCES
VGES
Viso
Tj
Tstg
T
Wt
Parameter
Collector current
Peak collector current
Maximum collector dissipation
Collector-emitter voltage
Gate-emitter voltage
Isolation voltage
Junction temperature
Storage temperature
Mounting torque , M5 main terminal
Mounting torque , M6 mounting
Approximate weight
Condition
Max. Value
Tc=80 C
100
Tc=25 C
200
Tc=25 C , Tj<150 C
800
G-E Short
1200
C-E Short
+20
Main terminal to baseplate , AC 1 min 3000
-40 to 150
-40 to 125
2.5 to 5
3 to 5
200
Unit
A
A
W
V
V
V
C
C
N.m
g
Static electrical characteristics , Tj=25 C unless otherwise specified
ICES
IGES
VGE(th)
VCE(sat)
QG
VEC
Parameter
Condition
Collector-cutoff current
Gate leakage current
VCE=VCES , VGE=0V
VGE=VGES , VCE=0V
Gate-emitter threshold voltage
Collector-emitter saturation voltage
IC=4mA , VCE=10V
IC=100A , VGE=15V , TJ=25 C
IC=100A , VGE=15V , TJ=125 C
Total gate charge
Emitter-collector voltage
VCC=600V , IC=100A , VGE=15V
IE=100A , VGE=0V
Min.
5
Typ.
6.2
1.8
2
1050
Max.
1.0
200
7
2.2
Unit
mA
μ^A
V
V
nC
V
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