NSGM100GB12A Datasheet, PDF (3/6 Pages) Nell Semiconductor Co., Ltd – IGBT Module (2 in one-package), 100A

SEMICONDUCTOR
NSGM100GB Series RRooHHSS
Fig.3 Collector current , IC=f (Tc)
Parameter:VGE>15V , Tj<150 C
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
TC ( C)
Fig.4 Transient thermal impedance IGBT , ZthJC=f (tp)
Parameter:D=tp/T
10 ⁰
10 ^-1
10 ^-2
10 ^-3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 ^-4
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
tp (s)
Fig.5 Typ. output characteristics , IC=f (VCE)
Parameter:tp=80_μs , Tj=25 C
200
180
17V
160
15V
13V
11V
140
9V
7V
120
100
80
60
40
20
0
0
1
2
3
4
5
VCE (V)
Fig.6 Typ. output characteristics , Ic=f (VCE)
Parameter:tp=80_μs , Tj=25 C
200
180
17V
160
15V
13V
11V
140
9V
7V
120
100
80
60
40
20
0
0
1
2
3
4
5
VCE (V)
www.nellse mi.co m
Page 3 of 6