NSGM100GB12A Datasheet, PDF (4/6 Pages) Nell Semiconductor Co., Ltd – IGBT Module (2 in one-package), 100A

SEMICONDUCTOR
NSGM100GB Series RRooHHSS
Fig.7 Typ. transfer characteristics , IC=f (VGE)
Parameter:tp=80_μs , VCE=20V
200
180
160
140
120
100
80
60
40
20
0
0
2
4
6
8 10 12 14
VGE (V)
Fig. 9 Typ. Capacitances , C=f (VCE)
Parameter:VGE=0V , f=1MHz
10 ²
10 ¹
Ciss
10 ⁰
Coss
Crss
10 ^-1
0
5 10 15 20 25 30 35 40
VCE (V)
Fig.8 Typ. gate charge , VGE=f (QGate)
Parameter:ICpuls=100A
20
18
16
14
600 V
800 V
12
10
8
6
4
2
0
0 100 200 300 400 500 600
QGate (nC)
Fig.10 Reverse biased safe operating area , ICplus=f (VCE) ,
Tj=150 C , Parameter:VGE=15V
2.5
2.0
1.5
1.0
0.5
0.0
0 200 400 600 800 1000 1200 1400 1600
VCE (V)
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