NSGM100GB12A Datasheet, PDF (2/6 Pages) Nell Semiconductor Co., Ltd – IGBT Module (2 in one-package), 100A

SEMICONDUCTOR
NSGM100GB Series RRooHHSS
Dynamic electrical characteristics , Tj=25 C unless otherwise specified
Cies
Coes
Cres
td(on)
tr
td(off)
tf
trr
Qrr
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time , Resistive
Rise time , Load
Turn-off delay time , Switching
Fall time , Times
Diode reverse recovery time
Diode reverse recovery charge
Condition
VGE=0V , VCE=25V
f=1MHz
VCC=600V , IC=100A
VGE1=VGE2=15V , RG=3Ω
IE=100A , diE/dt=-150A/_μs
IE=100A , diE/dt=-150A/_μs
Min.
Typ.
0.93
Max.
10
0.8
0.5
250
350
300
350
210
Unit
nF
ns
ns
μ^C
Thermal and mechanical characterisitics , Tj=25 C unless otherwise specified
Rth(j-c)
Rth(c-f)
Parameter
Condition
Min.
Per IGBT
Thermal resistance , junction to case
Per FWDi
Contact thermal resistance
Per module , thermal grease applied
Typ.
Max.
0.18
0.5
0.065
Unit
C/W
C/W
Fig.1 Power dissipation , Ptot=f (Tc)
Parameter:Tj<150 C
900
800
700
600
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Tc ( C)
Fig.2 Safe operating area , IC=f (VCE)
Parameter:D=0 , Tc=25 C , Tj<150 C
10 ³
tp=14.0_μs
10 ²
100_μs
10 ¹
10 ⁰
1 ms
10 ms
DC
10 ^-1
0
10
1
2
3
4
10
10
10
10
VCE (V)
www.nellse mi.co m
Page 2 of 6