NSGM100GB12A Datasheet, PDF (5/6 Pages) Nell Semiconductor Co., Ltd – IGBT Module (2 in one-package), 100A

SEMICONDUCTOR
NSGM100GB Series RRooHHSS
Fig.11 Short circuit safe operating area , ICsc=f (VCE) , Tj=150 C
Parameter:VGE=+15V , tSC<10_μs ,L<25nH
12
Fig.12 Typ. switching time , I=f IC _, inductive load , Tj=125 C
Parameter:VCE=600V , VGE=+15V , RG=6.8Ω
10 ³
10
tdoff
8
tdon
tr
6
10 ²
tf
4
2
0
0 200 400 600 800 1000 1200 1400 1600
VCE (V)
10 ¹
0
50
100
150
200
250
IC (A)
Fig.13 Typ. Switching time , t=f (RG) , inductive load , Tj=125 C
Parameter:VCE=600V , VGE=+15V , IC=100A
10 ⁴
Fig.14 Typ. switching losses , E=f (IC) , Inductive load , Tj=125 C
Parameter:VCE=600V , VGE=+15V , RG=6.8Ω
60
55
Eon
50
45
10 ³
tdoff
40
35
30
tdon
tr
25
10 ²
20
tf
Eoff
15
10
10 ¹
0
10
20
30
40
RG (_Ω)
50
60
5
0
0
50
100
150
200
250
IC (A)
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