IRF840 Datasheet, PDF (5/7 Pages) Motorola, Inc – N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
10
IRF840 Series RRooHHSS
Nell High Power Products
Fig.10 Maximum effective transient thermal lmpedance,
Junction-to-Case
1
D ~ 0.5
0.2
0.1 ^0.1
0.05
0.02
0.01
10^-2
Single pulse
(Thermal response)
10^-3
10^-5
10^-4
10^-3
10^-2
0.1
PDM
t1
t2
Notes:
1. Duty factor, D = t₁/ t₂
2. Peak T_J = P_DM * R_th(j-c) +T_C
1
10
10²
Rectangular Pulse Duration, t₁ (sec)
Fig.11a. Switching time test circuit
Fig.11b. Switching time waveforms
V_DS
V_GS
R_G
R_D
D.U.T.
10V
Pulse width ≤ 1µs
Duty Factor ≤ 0.1%
+
- ^VDD
V_DS
90%
10%
V_GS
t_d(ON)
t_R
td(OFF)
t_F
Fig.12a. Unclamped lnductive test circuit
Fig.12b. Unclamped lnductive waveforms
L
V_DS
Vary tp to obtain
V_DS
required l_AS
R_G
10V
D.U.T.
l_AS
+
- ^VDD
l_D(t)
V_DS
t_P
0.01Ω
l_AS
t_p
V_DD
Time
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