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IRF840 Datasheet, PDF (2/7 Pages) Motorola, Inc – N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
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SEMICONDUCTOR
IRF840 Series RRooHHSS
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
Rth(c-s)
Thermal resistance, case to heatsink
Rth(j-a)
Thermal resistance, junction to ambient
Nell High Power Products
Min.
Typ.
0.50
Max.
1
62
UNIT
ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
V(BR)DSS
Drain to source breakdown voltage
ID = 250µA ,VGS = 0V
500
V
▲ ▲ V(BR)DSS/ TJ Breakdown voltage temperature coefficient ID = 1mA, referenced to 25 °C
IDSS
Drain to source leakage current
VDS=500V, VGS=0V
VDS=400V, VGS=0V
TC = 25°C
TJ=125°C
0.78
V/ºC
25
μA
250
IGSS
Gate to source forward leakage current
Gate to source reverse leakage current
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
100
nA
-100
RDS(ON)
Static drain to source on-state resistance VGS = 10V, ID = 4.8A (Note 1),
0.85 Ω
VGS(TH)
Gate threshold voltage
VGS=VDS, ID=250μA
2
4
V
gfs
Forward transconductance
VDS=50V, ID=4.8A
4.9
S
CISS
Input capacitance
13000
COSS
Output capacitance
VDS = 25V, VGS = 0V, f =1MHz
310
pF
CRSS
Reverse transfer capacitance
120
td(ON)
Turn-on delay time
14
tr
td(OFF)
Rise time
Turn-off delay time
VDD = 250V, lD = 8A, RD = 31Ω,
VGS = 10V, RG =9.1Ω (Note 1)
23
ns
49
tf
Fall time
20
LD
Internal drain inductance
LS
internal source inductance
Between lead, 6mm from
package and center of die
4.5
nH
7.5
QG
Total gate charge
63
QGS
Gate to source charge
VDS = 400V, VGS = 10V, ID = 8A
9.5 nC
QGD
Gate to drain charge (Miller charge)
32
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
VSD
Diode forward voltage
ISD = 8A, VGS = 0V
2
V
Is (IsD)
Continuous source to drain current
Integral reverse P-N junction
8
diode in the MOSFET
D (Drain)
ISM
Pulsed source current
G
(Gate)
A
32
trr
Reverse recovery time
Qrr
Reverse recovery charge
tON
Forward turn-on time
S (Source)
IS = 8A, VGS = 0V,
dIF/dt = 100A/µs
460 970 ns
4.2 8.9 μC
Intrinsic turn-on time is negligible (turn-on is domonated by LS+LD)
Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2%.
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