IRF840 Datasheet, PDF (1/7 Pages) Motorola, Inc – N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
IRF840 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(8A, 500Volts)
DESCRIPTION
The Nell IRF840 are N-Channel enhancement mode silicon
gate power field effect transistors. They are designed, tested
and guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation.
They are designed as an extremely efficient and reliable
device for use in a wide variety of applications such as
switching regulators. convertors, UPS, switching mode power
supplies and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These transistors can be operated directly from integrated
circuits.
D
G
DS
TO-220AB
(IRF840A)
D (Drain)
FEATURES
R_DS(ON) = 0.85Ω @ V_GS = 10V
Ultra low gate charge(63nC Max.)
Low reverse transfer capacitance
(C_RSS = 120pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
G
(Gate)
S (Source)
PRODUCT SUMMARY
I_D (A)
V_DSS (V)
R_DS(ON) (Ω)
Q_G(nC) max.
8
500
0.85 @ V_GS = 10V
63
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
V_DSS
V_DGR
Drain to Source voltage(Note 1)
Drain to Gate voltage
T_J=25°C to 150°C
R_GS=20KΩ
V_GS
Gate to Source voltage
I_D
Continuous Drain Current
V_GS=10V, T_C=25°C
V_GS=10V, T_C=100°C
I_DM
Pulsed Drain current(Note 1)
I_AR
Repetitive avalanche current(Note 1)
E_AR
Repetitive avalanche energy(Note 1)
l_AR=8A, R_GS=50Ω, V_GS=10V
E_AS
Single pulse avalanche energy(Note 2)
l_AS=8A, L=14mH
dv/dt
Peak diode recovery dv/dt(Note 3)
Total power dissipation
P_D
Derating factor above 25°C
T_C=25°C
T_J
Operation junction temperature
T_STG
Storage temperature
T_L
Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature.
2.V_DD = 50V, L=14mH, l_AS=8A, R_G =25Ω, starting T_J =25°C
3.I_SD ≤ 8A, di/dt ≤ 100A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 150°C.
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Page 1 of 7
VALUE
UNIT
500
500
V
±20
8
5.1
A
32
8
13
mJ
510
mJ
3.5
V /ns
125
W
1
W /°C
-55 to 150
-55 to 150
ºC
300
10 (1.1)
lbf.in (N.m)