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| IRF840 Datasheet, PDF (3/7 Pages) Motorola, Inc – N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR | |||
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SEMICONDUCTOR
ORDERING INFORMATION SCHEME
IRF840 Series RRooHHSS
Nell High Power Products
IRF 840 A
MOSFET series
N-Channel, IRF series
Current & Voltage rating, lD & VDS
8A / 500V
Package type
A = TO-220AB
Fig.1 Typical output characteristics,TC =25°C
VGS
Top: 15V
10V
8V
7V
101
6V
5.5V
5V
Bottorm: 4.5V
Fig.2 Typical output characteristics,TC =150°C
VGS
Top: 15V
10V
101
8V
7V
6V
5.5V
5V
Bottorm: 4.5V
4.5V
100
100
4.5V
20µs pulse width
TJ=25°C
101
Drain-to-Source voltage, VDS (V)
100
100
20µs pulse width
TJ=50°C
101
Drain-to-Source voltage, VDS (V)
Fig.3 Typical transfer characteristics
TJ = 150°C
101
TJ = 25°C
100
20µs pulse width
VDS=50V
4
5
6
7
8
9
10
Gate-to-Source voltage, VGS (V)
Fig.4 Normalized On-Resistance vs. Temperature
3.0
lD = 8A
VGS=10V
2.5
2.0
1.5
1.0
0.5
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Junction Temperature,TJ (°C)
www.nellsemi.com
Page 3 of 7
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