2SJ649 Datasheet, PDF (7/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

PACKAGE DRAWING (Unit: mm)
Isolated TO-220 (MP-45F)
10.0 ± 0.3
4.5 ± 0.2
φ 3.2 ± 0.2
2.7 ± 0.2
2SJ649
0.7 ± 0.1
2.54
1.3 ± 0.2
2.5 ± 0.1
1.5 ± 0.2 0.65 ± 0.1
2.54
123
1.Gate
2.Drain
3.Source
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Data Sheet D16332EJ1V0DS
7