2SJ649 Datasheet, PDF (1/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ649
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ649 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ649
Isolated TO-220
FEATURES
• Low on-state resistance:
RDS(on)1 = 48 mΩ MAX. (VGS = –10 V, ID = –10 A)
RDS(on)2 = 75 mΩ MAX. (VGS = –4.0 V, ID = –10 A)
• Low input capacitance:
Ciss = 1900 pF TYP. (VDS = –10 V, VGS = 0 V)
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
Total Power Dissipation (TC = 25°C)
VDSS
–60
V
VGSS
m 20
V
ID(DC)
m 20
A
ID(pulse)
m 70
A
PT
25
W
Total Power Dissipation (TA = 25°C)
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current ^Note2
Single Avalanche Energy ^Note2
Tstg –55 to +150 °C
IAS
–20
A
EAS
40
mJ
(Isolated TO-220)
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = –30 V, RG = 25 Ω, VGS = –20 ¡ 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16332EJ1V0DS00 (1st edition)
Date Published May 2003 NS CP(K)
Printed in Japan
2002