2SJ649 Datasheet, PDF (6/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
- 100
IAS1 = −20 A
IAS2 = −10 A
- 10
EAS2 = 100 mJ
VDD = −30 V
RG = 25 Ω
VGS = -20 → 0 V
Starting Tch = 25°C
-1
10 µ
100 µ
EAS1 = 40 mJ
1m
L - Inductive Load - H
10 m
2SJ649
SINGLE AVALANCHE ENERGY
DERATING FACTOR
100
VDD = −30 V
RG = 25 Ω
80
VGS = −20 → 0 V
IAS ≤ −20 A
60
40
20
0
25
50
75
100
125
150
Starting Tch - Starting Channel Temperature - °C
6
Data Sheet D16332EJ1V0DS