2SJ649 Datasheet, PDF (2/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

2SJ649
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Symbol
Test Condtions
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance ^Note
Drain to Source On-state Resistance ^Note
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
VDS = –60 V, VGS = 0 V
VGS = m 20 V, VDS = 0 V
VDS = –10 V, ID = –1 mA
VDS = –10 V, ID = –10 A
VGS = –10 V, ID = –10 A
RDS(on)2 VGS = –4.0 V, ID = –10 A
Input Capacitance
Ciss
VDS = –10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss
f = 1 MHz
Turn-on Delay Time
td(on)
VDD = –30 V, ID = –10 A
Rise Time
tr
VGS = –10 V
Turn-off Delay Time
td(off)
RG = 0 Ω
Fall Time
tf
Total Gate Charge
QG
VDD = –48 V
Gate to Source Charge
QGS
VGS = –10 V
Gate to Drain Charge
Body Diode Forward Voltage ^Note
QGD
VF(S-D)
ID = –20 A
IF = 20 A, VGS = 0 V
Reverse Recovery Time
trr
IF = 20 A, VGS = 0 V
Reverse Recovery Charge
Qrr
Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2%
di/dt = 100 A/µs
MIN. TYP. MAX. Unit
–10 µA
m 10 µA
–1.5 –2.0 –2.5
V
10 20
S
38 48
mΩ
47 75
mΩ
1900
pF
350
pF
140
pF
10
ns
10
ns
73
ns
17
ns
38
nC
7
nC
10
nC
0.95
V
49
ns
100
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
L
PG
50 Ω
VDD
VGS = –20 → 0 V
−
IAS ^BVDSS
VDS
ID
VDD
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS (−)
0
τ
τ = 1 µs
Duty Cycle ≤ 1%
RL
VDD
VGS (−)
VGS
Wave Form
0 ^10%
VDS (−)
90%
VDS
VDS
0
Wave Form
td(on)
90%
VGS
10% 10%
90%
tr td(off) tf
ton
toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = −2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet D16332EJ1V0DS