2SJ649 Datasheet, PDF (3/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

2SJ649
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
30
25
20
15
10
5
0
0
25
50
75
100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
- 100
ID(pulse)
PW = 100 µs
- 10
ID(DC)
1 ms
RDS(on) Limited
(at VGS = −10 V)
DC
-1
10 ms
Single pulse
TC = 25°C
- 0.1
- 0.1
-1
- 10
VDS - Drain to Source Voltage - V
- 100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 62.5°C/W
10
Rth(ch-C) = 5.0°C/W
1
0.1
0.01
10 µ
100 µ 1 m
10 m
100 m
1
PW - Pulse Width - s
Single pulse
10
100
1000
Data Sheet D16332EJ1V0DS
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