2SJ649 Datasheet, PDF (5/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

2SJ649
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
90
80
70
VGS = −4.0 V
60
50
−10 V
40
30
20
10
Pulsed
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tch - Channel Temperature - °C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
VGS = 0 V
f = 1 MHz
Ciss
Coss
100
Crss
10
–0.1
–1
–10
–100
VDS - Drain to Source Voltage - V
1000
SWITCHING CHARACTERISTICS
VDD = –30 V
VGS = –10 V
RG = 0 Ω
100
td(off)
tf
10
td(on)
tr
1
–0.1
–1
–10
–100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
- 50
- 10
- 45
- 40
VDD = −48 V
- 35
−30 V
- 30
−12 V
- 25
VGS
-8
-6
- 20
-4
- 15
- 10
-5
0
0
-2
VDS
ID = −20 A
Pulsed
0
5 10 15 20 25 30 35 40
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
–100 _Pulsed
VGS = –10 V
–10
–4.0 V
–1
0V
–0.1
–0.01
0
–0.5
–1.0
–1.5
VF(S-D) - Source to Drain Voltage - V
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1
1
10
100
IF - Diode Forward Current - A
Data Sheet D16332EJ1V0DS
5