NP22N055HHE Datasheet, PDF (6/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

NP22N055HHE, NP22N055IHE
PACKAGE DRAWINGS (Unit: mm)
1)TO-251 (MP-3)
6.5±0.2
5.0±0.2
2.3±0.2
0.5±0.1
2)TO-252 (MP-3Z)
6.5±0.2
5.0±0.2
2.3±0.2
0.5±0.1
1.1±0.2
2.3 TYP.
0.5^{+−00..21}
2.3 TYP.
0.5^{+−00..21}
1.1±0.2
2.3 TYP.
0.9 MAX. 0.8 MAX.
2.3 TYP.
0.8 TYP.
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark 1. These products are an electrostatic sensitive device. Please handle with caution.
2. The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
6
Data Sheet D14135EJ3V0DS