NP22N055HHE Datasheet, PDF (2/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

NP22N055HHE, NP22N055IHE
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain to Source On-state Resistance
RDS(on) VGS = 10 V, ID = 11 A
Gate to Source Threshold Voltage
VGS(th) VDS = VGS, ID = 250 µA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 11 A
Drain Leakage Current
IDSS
VDS = 55 V, VGS = 0 V
Gate to Source Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
Input Capacitance
Ciss
VDS = 25 V, VGS = 0 V, f = 1 MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-on Delay Time
td(on)
ID = 11 A, VGS(on) = 10 V, VDD = 28 V,
Rise Time
tr
RG = 1 Ω
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
ID = 22 A, VDD = 44 V, VGS = 10 V
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
Body Diode Forward Voltage
VF(S-D) IF = 22 A, VGS = 0 V
Reverse Recovery Time
trr
IF = 22 A, VGS = 0 V, di/dt = 100A/µs
Reverse Recovery Charge
Qrr
MIN. TYP. MAX. UNIT
30 39 mΩ
2.0 3.0 4.0 V
4
8
S
10 µA
±10 µA
590 890 pF
110 170 pF
52 94 pF
11 24 ns
6.0 15 ns
25 49 ns
6.6 17 ns
12 18 nC
3
nC
5
nC
1.0
V
35
ns
42
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
L
PG.
50 Ω
VDD
VGS = 20 → 0 V
IAS
ID
VDD
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
PG.
RG
VGS
0
τ
τ = 1 µs
Duty Cycle ≤ 1 %
RL
VDD
VGS
VGS
Wave Form
10 %
0
VDS
90 %
VDS
VDS
0
Wave Form
td(on)
90 %
VGS(on)
90 %
10 % 10 %
tr td(off)
tf
ton
toff
2
Data Sheet D14135EJ3V0DS