NP22N055HHE Datasheet, PDF (4/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

NP22N055HHE, NP22N055IHE
Figure6. FORWARD TRANSFER CHARACTERISTICS
100
Pulsed
10
1
TA = −40˚C
25˚C
75˚C
150˚C
0.1
175˚C
0.01
1.0
VDS = 10 V
2.0
3.0
4.0
5.0
6.0
VGS - Gate to Source Voltage - V
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
Pulsed
VDS = 10 V
10
TA = 175˚C
1
75˚C
25˚C
−40˚C
0.1
0.01
0.01
0.1
1
10
100
ID - Drain Current - A
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
80
Pulsed
70
60
50
40
VGS = 10 V
30
20
10
0
0.1
1
10
100
ID - Drain Current - A
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
60
Pulsed
50
VGS =10 V
40
30
20
10
0
0
1
2
3
4
VDS - Drain to Source Voltage - V
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
80
Pulsed
70
60
50
40
ID = 11 A
30
20
10
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = VGS
4.0
ID = 250 µA
3.0
2.0
1.0
0
−50
0
50
100 150
Tch - Channel Temperature - ˚C
4
Data Sheet D14135EJ3V0DS