NP22N055HHE Datasheet, PDF (1/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP22N055HHE, NP22N055IHE
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
These products are N-channel MOS Field Effect
Transistors designed for high current switching
applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP22N055HHE
TO-251
NP22N055IHE
TO-252
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 11 A)
• Low Ciss : Ciss = 590 pF TYP.
• Built-in gate protection diode
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
55
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
Drain Current (Pulse) ^Note1
ID(DC)
±22
A
ID(pulse)
±55
A
Total Power Dissipation (TA = 25°C)
PT
1.2
W
Total Power Dissipation (TC = 25°C)
PT
Single Avalanche Current ^Note2
IAS
Single Avalanche Energy ^Note2
EAS
45
W
13 / 5
A
16 / 25
mJ
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
–55 to +175 °C
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25°C, RG = 25 Ω , VGS = 20 V→0 V (See Figure 4.)
(TO-252)
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
3.33
°C/W
125
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14135EJ3V0DS00 (3rd edition)
The mark 5 shows major revised points.
Date Published March 2001 NS CP(K)
Printed in Japan
©
1999