NP22N055HHE Datasheet, PDF (3/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

NP22N055HHE, NP22N055IHE
TYPICAL CHARACTERISTICS (TA = 25 °C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - ˚C
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - ˚C
5 Figure3. FORWARD BIAS SAFE OPERATING AREA
1000
100
10
R(^D_a^S_t^(oV^{n)GLS i=m1ite0dV)}
ID(pulse)
ID(DC)
LimPoitweder
DC
Dissipation
1 _ms
100
PW
µ_s
=
10
µ_s
1
TC = 25˚C
Single Pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
30
25 mJ
25
20
16 mJ
15
IAS = 5 A
13 A
10
5
0
25 50 75 100 125 150 175
Starting Tch - Starting Channel Temperature - ˚C
1000
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 125 ˚C/W
10
Rth(ch-C) = 3.33 ˚C/W
1
0.1
0.01
10µ
100 µ 1 m
10 m 100 m
1
PW - Pulse Width - s
Single Pulse
TC = 25˚C
10
100
1000
Data Sheet D14135EJ3V0DS
3