NP22N055HHE Datasheet, PDF (5/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

NP22N055HHE, NP22N055IHE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
90
80
70
60
50
VGS = 10 V
40
30
20
10
ID = 11 A
0
−50
0
50 100 150
Tch - Channel Temperature - ˚C
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
VGS = 0 V
f = 1 MHz
1000
Ciss
Coss
100
Crss
10
0.1
1
10
100
VDS - Drain to Source Voltage - V
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100 _Pulsed
VGS = 10 V
10
VGS = 0 V
1
0.1
0.01
0
0.5
1.0
1.5
VSD - Source to Drain Voltage - V
Figure15. SWITCHING CHARACTERISTICS
1000
100 tf
10
tr
td(off)
td(on)
1
0.1
1
10
100
ID - Drain Current - A
1000
Figure16. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1
1.0
10
100
IF - Drain Current - A
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80
16
14
60
VDD = 44 V
28 V
11 V
40
12
VGS
10
8
6
20
4
VDS
2
ID = 22 A
0
0 2 4 6 8 10 12 14 16
QG - Gate Charge - nC
Data Sheet D14135EJ3V0DS
5