GQM1885C2A6R2DB01D Datasheet, PDF (3/29 Pages) Murata Manufacturing Co., Ltd. – CHIP MONOLITHIC CERAMIC CAPACITOR FOR GENERAL

■SPECIFICATIONS AND TEST METHODS
No
Item
10 Adhesive Strength
of Termination
Specification
Temperature
High Dielectric
Compensating Type
Constant Type
No removal of the terminations or other defect should occur.
11 Vibration
Resistance
Appearance No defects or abnormalities.
Capacitance Within the specified tolerance.
12 Deflection
Q/D.F.
30pF and over:Q≧1000
30pF and beloow:Q≧400+20C
C:Nominal Capacitance(pF)
Appearance No defects or abnormalities.
[B1,B3,R1,R6,R7,C7,C8,L8]
W.V.:100V :0.025max.(C＜0.068mF)
:0.05max.(C≧0.068mF)
W.V.:50V/25V :0.025max.
W.V.:16V/10V :0.035max.
W.V.:6.3V/4V :0.05max. (C＜3.3mF)
:0.1max.(C≧3.3mF)
[R9]
W.V.:50V: 0.05max.
[F1,F5]
W.V.:25Vmin
:0.05max. (C＜0.1mF)
:0.09max. (C≧0.1mF)
W.V.:16V/10V:0.125max.
W.V.:6.3V:0.15max.
Capacitance Within ±5% or± 0.5pF
Change
(Whichever is larger)
Within ±10%
Test Method
Solder the capacitor on the test jig (glass epoxy board)shown in
Fig.3 using an eutectic solder. Then apply 10N* force in parallel
with the test jig for 10±1seconds.
The soldering should be done either with an iron or using the
reflow method and should be conducted with care so that the
soldering is uniform and free of defects such as heat shock.
*1N(GRM02),2N(GRM03),5N(GRM15,GRM18)
Solder the capacitor on the test jig (glass epoxy board) in the same
manner and under the same conditions as (10).
The capacitor should be subjected to a simple harmonic motion
having a total amplitude of 1.5mm, the frequency being varied
uniformly between the approximate limits of 10 and 55Hz. The
frequency range, from 10 to 55Hz and return to 10Hz, should be
traversed in approximately 1 minute. This motion should be
applied for a period of 2 hours in each 3 mutually perpendicular
directions(total of 6 hours).
Solder the capacitor on the test jig (glass epoxy board) shown in
Fig.1 using an eutectic solder. Then apply a force in the direction
shown in Fig 2 for 5±1 seconds. The soldering should be done
by the reflow method and should be conducted with care so that
the soldering is uniform and free of defects such as heat shock.
13 Solderability
of Termination
75% of the terminations is to be soldered evenly and continuously.
Immerse the capacitor in a solution of ethanol (JIS-K-8101) and
rosin (JIS-K-5902) (25% rosin in weight propotion) .
Preheat at 80 to 120℃ for 10-to 30 seconds.
After preheating, immerse in an eutectic solder solution for
2±0.5 seconds at 230±5℃ or Sn-3.0Ag-0.5Cu solder solution
for 2±0.5 seconds at 245±5℃.
14 Resistance to Appearance No defects or abnormalities.
Preheat the capacitor at 120 to 150℃ for 1 minute.
Soldering Heat
Immerse the capacitor in an eutectic solder solution* or
Capacitance Within ±2.5% or± 0.25pF
Change
(Whichever is larger)
B1,B3,R1,R6,R7,R9,C7,C8,L8:Within ±7.5% Sn-3.0Ag-0.5Cu solder solution at 270±5℃ for 10±0.5 seconds.
F1,F5 :Within ±20%
Set at room temperature for 24±2 hours, then measure.
Q/D.F.
30pF and over:Q≧1000
ï¼»B1,B3,R1,R6,R7,C7,C8,L8ï¼½
30pF and beloow:Q≧400+20C W.V.:100V :0.025max.(C＜0.068mF)
*Not apply to GRM02
:0.05max.(C≧0.068mF)
· Initial measurement for high dielectric constant type
C:Nominal Capacitance(pF) W.V.:50V/25V :0.025max.
Perform a heat treatment at 150+0/-10C for one hour and then set
W.V.:16V/10V :0.035max.
at room temperature for 24±2 hours.
W.V.:6.3V/4V :0.05max. (C＜3.3mF)
Perform the initial measurement.
:0.1max.(C≧3.3mF)
[R9]
*Preheating for GRM32/43/55
W.V.:50V: 0.05max.
[F1,F5]
W.V.:25Vmin
:0.05max. (C＜0.1mF)
:0.09max. (C≧0.1mF)
Table1
Step
1
2
Temperature
100C to 120C
170C to 200C
Time
1 min.
1 min.
W.V.:16V/10V:0.125max.
W.V.:6.3V:0.15max.
I.R.
More than 10,000MW or 500W·F(Whichever is smaller)
15 Temperature
Cycle
Dielectric
No defects.
Strength
Appearance No defects or abnormalities.
Fix the capacitor to the supporting jig in the same
manner and under the same conditions as (10).
Capacitance Within ±2.5% or± 0.25pF B1,B3,R1,R6,R7,R9,C7,C8,L8:Within ±7.5% Perform the five cycles according to the four heat
Change
(Whichever is larger)
F1,F5 :Within ±20%
treatments shown in the following table.
Q/D.F.
30pF and over:Q≧1000
ï¼»B1,B3,R1,R6,R7,C7,C8,L8ï¼½
Set for 24±2 hours at room temperature, then measure.
30pF and beloow:Q≧400+20C W.V.:100V :0.025max.(C＜0.068mF)
:0.05max.(C≧0.068mF)
Step
Temp.(C)
Time (min)
C:Nominal Capacitance(pF)
W.V.:50V/25V :0.025max.
W.V.:16V/10V :0.035max.
1
Min.
Operating Temp.+0/-3
30±3
W.V.:6.3V/4V :0.05max. (C＜3.3mF)
2
Room Temp
2 to 3
:0.1max.(C≧3.3mF)
[R9]
W.V.:50V: 0.05max.
3
Max.
　
Operating Temp.+3/-0
4
Room Temp
30±3
2 to 3
[F1,F5]
W.V.:25Vmin
· Initial measurement for high dielectric constant type
:0.05max. (C＜0.1mF)
Perform a heat treatment at 150+0/-10C for one hour and then set
:0.09max. (C≧0.1mF)
at room temperature for 24±2 hours.
W.V.:16V/10V:0.125max.
Perform the initial measurement.
W.V.:6.3V:0.15max.
I.R.
More than 10,000MW or 500W·F(Whichever is smaller)
Dielectric
Strength
No defects.
JEMCGS-0001S
3