MMDF4C03HD Datasheet, PDF (9/12 Pages) Motorola, Inc – COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS

N–Channel
350
300
ID = 6 A
250
200
150
100
50
0
25
45
65
85
105
125
145
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
MMDF4C03HD
P–Channel
500
450
ID = 3 A
400
350
300
250
200
150
100
50
0
25
45
65
85
105
125
145
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
TYPICAL ELECTRICAL CHARACTERISTICS
10
1.0
D = 0.5
0.2
0.1 _0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
t, TIME (seconds)
Figure 14. Thermal Response
100
1000
di/dt
IS
trr
ta
tb
TIME
tp
0.25 IS
IS
Figure 15. Diode Reverse Recovery Waveform
Motorola TMOS Power MOSFET Transistor Device Data
9