MMDF4C03HD Datasheet, PDF (6/12 Pages) Motorola, Inc – COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS

MMDF4C03HD
12
11
QT
10
9.0
8.0
30
VGS
20
7.0 Q1
Q2
6.0
5.0
4.0
ID = 5 A
10
3.0
TJ = 25°C
2.0
1.0
Q3
VDS
0
0
0 2.0 4.0 6.0 8.0 10 12 14 16
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
7.0
6.0
5.0
4.0 Q1
QT
Q2
30
VGS
20
3.0
2.0
ID = 3 A
10
TJ = 25°C
1.0
Q3
VDS
0
0
0 2.0 4.0 6.0 8.0 10 12 14 16
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
1000
VDD = 15 V
ID = 6 A
VGS = 10 V
100 ^{TJ = 25°C} _td(off)
tf
tr
10
td(on)
1000
VDD = 15 V
ID = 3 A
100
VGS = 10 V
TJ = 25°C
td(off)
tf
tr
10
td(on)
1.0
1.0
10
100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
1.0
1.0
10
100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
6
Motorola TMOS Power MOSFET Transistor Device Data