MMDF4C03HD Datasheet, PDF (2/12 Pages) Motorola, Inc – COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS

MMDF4C03HD
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Polarity Min
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
V(BR)DSS
—
30
IDSS
(N)
—
(P)
—
IGSS
—
—
VGS(th)
—
1.0
—
—
Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 3.5 Adc)
RDS(on)1
(N)
—
(VGS = 10 Vdc, ID = 3.5 Adc)
(P)
—
Static Drain–to–Source On–Resistance
RDS(on)2
(VGS = 4.5 Vdc, ID = 2.5 Adc)
(N)
—
(VGS = 4.5 Vdc, ID = 2.0 Adc)
(P)
—
Forward Transconductance
gFS
(VDS = 15 Vdc, ID = 3.5 Adc)
(N)
—
(P)
—
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 24 Vdc,
VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
(N)
—
(P)
—
(N)
—
(P)
—
(N)
—
(P)
—
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
td(on)
(N)
—
(P)
—
Rise Time
Turn–Off Delay Time
(VDD = 15 Vdc,
ID = 1.0 Adc,
VGS = 10 Vdc,
RG = 6.0 Ω)
tr
td(off)
(N)
—
(P)
—
(N)
—
(P)
—
Fall Time
Total Gate Charge
(See Figure 8)
tf
(N)
—
(P)
—
QT
(N)
—
(P)
—
(VDS = 10 Vdc,
ID = 3.5 Adc,
VGS = 10 Vdc)
Q1
(N)
—
(P)
—
Q2
(N)
—
(P)
—
Q3
(N)
—
(P)
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(2)
(IS = 1.7 Adc, VGS = 0 Vdc)
(IS = –1.7 Adc, VGS = 0 Vdc)
Reverse Recovery Time
(N)
(ID = 3.5 Adc,
VGS = 0 Vdc
dIS/dt = 100 A/µs)
VSD
trr
ta
(N)
—
(P)
—
(N)
—
(P)
—
(N)
—
(P)
—
Reverse Recovery Stored Charge
(P)
(ID = 3.5 Adc,
VGS = 0 Vdc
dIS/dt = 100 A/µs)
tb
QRR
(N)
—
(P)
—
(N)
—
(P)
—
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
Typ
Max
Unit
Vdc
—
—
—
1.0
µAdc
—
1.0
—
±100
nAdc
—
—
0.037
0.075
0.55
0.125
9.0
6.0
—
—
0.05
0.085
0.08
0.16
—
—
Vdc
mV/°C
Ohms
Ohms
mhos
430
600
pF
425
600
217
300
209
300
67.5
135
57.2
80
8.2
16.4
ns
11.7
23.4
8.48
16.9
15.8
31.6
89.6
167.3
179
334.6
61.1
102.6
122
205.2
15.7
31.4
nC
14.8
29.6
2.0
—
1.7
—
4.6
—
4.7
—
3.9
—
3.4
—
0.77
1.2
Vdc
0.90
1.2
54.5
—
ns
77.4
—
14.8
—
19.9
—
39.7
—
57.5
—
0.048
—
µC
0.088
—
2
Motorola TMOS Power MOSFET Transistor Device Data